DSP051N10N Spec and Replacement
Type Designator: DSP051N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: DFN5X6-8L
DSP051N10N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSP051N10N Specs
dsp051n10n.pdf
DSP051N10N 96A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.9m DS(on) (TYP) the RoHS standard. 1 3 S I = 96A D 2 Features Fast switching Low on resistance Low ga... See More ⇒
Detailed specifications: DHS045N85F , DHS045N85I , DHS045N88 , DHS045N88B , DSP018N04LA , DSP032N08NA , DSP037N08N3 , DSP038N08NA , IRF1404 , DSP060N04LA , DSP070N10L3A , DSU007N04NA , DSU011N08N3A , DSU021N10NA , DSU023N10N3 , DSU024N10N3A , DSU035N10N3A .
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