All MOSFET. DSU007N04NA Datasheet

 

DSU007N04NA Datasheet and Replacement


   Type Designator: DSU007N04NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 118 nC
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 5403 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: TOLL
 

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DSU007N04NA Datasheet (PDF)

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DSU007N04NA

DSU007N04NA40V/0.5m/360A N-MOSFETFeatures Key Parameters AEC-Q101 qualified VDS 40V Low on resistance RDS(on)typ. 0.5m Low reverse transfer capacitances ID (Silicon limit) 475A 100% single pulse avalanche energy test ID (Package limit) 360A 100% VDS test Vth 2.9V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 9669pFQgd 11.5nCApplications

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