All MOSFET. DSU011N08N3A Datasheet

 

DSU011N08N3A Datasheet and Replacement


   Type Designator: DSU011N08N3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 3102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: TOLL
 

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DSU011N08N3A Datasheet (PDF)

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DSU011N08N3A

DSU011N08N3A 85V/0.9m/360A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 85V Extremely low on-resistance RDS(on) RDS(on)typ. 0.9mID (Silicon limit) 433A 175C operating temperatureID (Package limit) 360A Pb-Free plating / Halogen-Free / RoHS compliant 100% avalanche screened Vth 3VCiss@10V 16105pF 100% VDS testQgd 37nCApplications

Datasheet: DSP018N04LA , DSP032N08NA , DSP037N08N3 , DSP038N08NA , DSP051N10N , DSP060N04LA , DSP070N10L3A , DSU007N04NA , 10N60 , DSU021N10NA , DSU023N10N3 , DSU024N10N3A , DSU035N10N3A , DSU035N14N3 , DTD080N07N , DTE025N04NA , DHS031N07P .

History: DSG028N10NA | DHS035N10E | DTE025N04NA

Keywords - DSU011N08N3A MOSFET datasheet

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