All MOSFET. DSU011N08N3A Datasheet

 

DSU011N08N3A Datasheet and Replacement


   Type Designator: DSU011N08N3A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 210 nC
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 3102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: TOLL
 

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DSU011N08N3A Datasheet (PDF)

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DSU011N08N3A

DSU011N08N3A 85V/0.9m/360A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 85V Extremely low on-resistance RDS(on) RDS(on)typ. 0.9mID (Silicon limit) 433A 175C operating temperatureID (Package limit) 360A Pb-Free plating / Halogen-Free / RoHS compliant 100% avalanche screened Vth 3VCiss@10V 16105pF 100% VDS testQgd 37nCApplications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DSU021N10NA

Keywords - DSU011N08N3A MOSFET datasheet

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