DSU021N10NA Datasheet. Specs and Replacement
Type Designator: DSU021N10NA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 143 nS
Cossⓘ - Output Capacitance: 1524 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TOLL
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DSU021N10NA substitution
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DSU021N10NA datasheet
dsu021n10na.pdf
DSU021N10NA 300A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 100V DS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same R = 1.6m DS(on) (TYP) G time. Which accords with the RoHS standard. 1 I = 300A D 3 S 2 Features Low on resistance Low ga... See More ⇒
dsu023n10n3.pdf
DSU023N10N3 100V/2m /281A N-MOSFET Features Key Parameters VDS 100V Advanced SGT2 silicon technology utilized Extremely low on-resistance RDS(on) RDS(on)typ. 2m ID 281A Low reverse transfer capacitances 100% single pulse avalanche energy test Vth 3V Ciss@10V 12750pF 100% VDS test Pb-Free plating / Halogen-Free / RoHS compliant Qgd 24.3nC Applications ... See More ⇒
dsu024n10n3a.pdf
DSU024N10N3A 100V/1.8m /272A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 100V RDS(on)typ. Low on resistance 1.8m Low reverse transfer capacitances VTH 3V ID 100% single pulse avalanche energy test 272A Ciss@10V 100% VDS test 7035pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 27nC Applications Power switching applications ... See More ⇒
Detailed specifications: DSP032N08NA, DSP037N08N3, DSP038N08NA, DSP051N10N, DSP060N04LA, DSP070N10L3A, DSU007N04NA, DSU011N08N3A, AO3400, DSU023N10N3, DSU024N10N3A, DSU035N10N3A, DSU035N14N3, DTD080N07N, DTE025N04NA, DHS031N07P, DHS035N10
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