All MOSFET. DSU021N10NA Datasheet

 

DSU021N10NA Datasheet and Replacement


   Type Designator: DSU021N10NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 255 nC
   tr ⓘ - Rise Time: 143 nS
   Cossⓘ - Output Capacitance: 1524 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TOLL
 

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DSU021N10NA Datasheet (PDF)

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DSU021N10NA

DSU021N10NA300A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 100VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameR = 1.6mDS(on) (TYP)Gtime. Which accords with the RoHS standard.1I = 300AD3 S2 Features Low on resistance Low ga

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DSU021N10NA

DSU023N10N3 100V/2m/281A N-MOSFET Features Key ParametersVDS 100V Advanced SGT2 silicon technology utilized Extremely low on-resistance RDS(on) RDS(on)typ. 2mID 281A Low reverse transfer capacitances 100% single pulse avalanche energy test Vth 3VCiss@10V 12750pF 100% VDS test Pb-Free plating / Halogen-Free / RoHS compliant Qgd 24.3nCApplications

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DSU021N10NA

DSU024N10N3A 100V/1.8m/272A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 1.8m Low reverse transfer capacitances VTH 3VID 100% single pulse avalanche energy test 272ACiss@10V 100% VDS test 7035pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 27nCApplications Power switching applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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