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DTD080N07N Spec and Replacement


   Type Designator: DTD080N07N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252

 DTD080N07N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DTD080N07N Specs

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DTD080N07N

DTD080N07N 68V/7.2m /80A N-MOSFET Features Key Parameters VDS Low on resistance 68V RDS(on)typ. Low reverse transfer capacitances 7.2m ID 100% single pulse avalanche energy test 80A 100% VDS test Vth 3V Ciss@10V Pb-Free plating / Halogen-Free / RoHS compliant 2859pF Qgd 19nC Applications Motor Control and Drive Charge/Discharge for Battery Manag... See More ⇒

Detailed specifications: DSP070N10L3A , DSU007N04NA , DSU011N08N3A , DSU021N10NA , DSU023N10N3 , DSU024N10N3A , DSU035N10N3A , DSU035N14N3 , IRFB4115 , DTE025N04NA , DHS031N07P , DHS035N10 , DHS035N10E , DHS035N88 , DHS035N88E , DHS035N88I , DHS045N88D .

History: DHI85N08 | DHI8004 | BUK9M19-60E

Keywords - DTD080N07N MOSFET specs

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