All MOSFET. DTD080N07N Datasheet

 

DTD080N07N Datasheet and Replacement


   Type Designator: DTD080N07N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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DTD080N07N Datasheet (PDF)

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DTD080N07N

DTD080N07N 68V/7.2m/80A N-MOSFET Features Key ParametersVDS Low on resistance 68VRDS(on)typ. Low reverse transfer capacitances 7.2mID 100% single pulse avalanche energy test 80A 100% VDS test Vth 3VCiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 2859pFQgd 19nCApplications Motor Control and Drive Charge/Discharge for Battery Manag

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