DTD080N07N Datasheet. Specs and Replacement
Type Designator: DTD080N07N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 193 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
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DTD080N07N substitution
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DTD080N07N datasheet
dtd080n07n.pdf
DTD080N07N 68V/7.2m /80A N-MOSFET Features Key Parameters VDS Low on resistance 68V RDS(on)typ. Low reverse transfer capacitances 7.2m ID 100% single pulse avalanche energy test 80A 100% VDS test Vth 3V Ciss@10V Pb-Free plating / Halogen-Free / RoHS compliant 2859pF Qgd 19nC Applications Motor Control and Drive Charge/Discharge for Battery Manag... See More ⇒
Detailed specifications: DSP070N10L3A, DSU007N04NA, DSU011N08N3A, DSU021N10NA, DSU023N10N3, DSU024N10N3A, DSU035N10N3A, DSU035N14N3, IRFB4115, DTE025N04NA, DHS031N07P, DHS035N10, DHS035N10E, DHS035N88, DHS035N88E, DHS035N88I, DHS045N88D
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