DTE025N04NA Datasheet. Specs and Replacement
Type Designator: DTE025N04NA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 127 nS
Cossⓘ - Output Capacitance: 768 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO263
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DTE025N04NA datasheet
dte025n04na dtg025n04na.pdf
DTE025N04NA&DTG025N04NA 220A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.1m DS(on) (TYP) standard. 1 3 S I = 220A D 2 Features AEC Q101 qualified MSL1 up to 260 C peak ... See More ⇒
Detailed specifications: DSU007N04NA, DSU011N08N3A, DSU021N10NA, DSU023N10N3, DSU024N10N3A, DSU035N10N3A, DSU035N14N3, DTD080N07N, 2N7000, DHS031N07P, DHS035N10, DHS035N10E, DHS035N88, DHS035N88E, DHS035N88I, DHS045N88D, DHS045N88E
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