All MOSFET. DTE025N04NA Datasheet

 

DTE025N04NA Datasheet and Replacement


   Type Designator: DTE025N04NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 127 nS
   Cossⓘ - Output Capacitance: 768 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO263
 

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DTE025N04NA Datasheet (PDF)

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DTE025N04NA

DTE025N04NA&DTG025N04NA220A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.1mDS(on) (TYP)standard.13 SI = 220AD2 Features AEC Q101 qualified MSL1 up to 260C peak

Datasheet: DSU007N04NA , DSU011N08N3A , DSU021N10NA , DSU023N10N3 , DSU024N10N3A , DSU035N10N3A , DSU035N14N3 , DTD080N07N , IRF9540 , DHS031N07P , DHS035N10 , DHS035N10E , DHS035N88 , DHS035N88E , DHS035N88I , DHS045N88D , DHS045N88E .

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