DSG028N10NA Datasheet. Specs and Replacement

Type Designator: DSG028N10NA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 247 nC

tr ⓘ - Rise Time: 169 nS

Cossⓘ - Output Capacitance: 1470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO220

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DSG028N10NA datasheet

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 dse026n10na dsg028n10na.pdf pdf_icon

DSG028N10NA

DSE026N10NA&DSG028N10NA 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided R = 2.4m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 2.2m T0-263 DS(on) (TYP) 1 3 S I = 180A D 2... See More ⇒

 9.1. Size:1551K  cn wxdh
 dse022n10n3 dsg024n10n3.pdf pdf_icon

DSG028N10NA

DSE022N10N3&DSG024N10N3 100V/1.7m /240A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 1.7m RDS(on)typ. TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3V ID Silicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364A ID Package limit 240A ... See More ⇒

Detailed specifications: DHS045N88F, DHS045N88I, DHS045N98, DHS045N98B, DHS045N98D, DHS045N98E, DHS045N98F, DHS045N98I, 4435, DSG030N10N3, DSG041N08NA, DSG045N14N, DSG047N08N3, DSG048N08N3, DSG052N14N, DSG053N08N3, DSG054N10N3

Keywords - DSG028N10NA MOSFET specs

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