DSG030N10N3 Datasheet. Specs and Replacement

Type Designator: DSG030N10N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V

Qg ⓘ - Total Gate Charge: 170 nC

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 2710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

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DSG030N10N3 datasheet

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DSG030N10N3

DSG030N10N3/DSE028N10N3 170A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 100V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 2.6m TO-220 DS(on) (TYP) the RoHS standard. G R = 2.4m TO-263 DS(on) (TYP) 1 2 Features 3 ... See More ⇒

Detailed specifications: DHS045N88I, DHS045N98, DHS045N98B, DHS045N98D, DHS045N98E, DHS045N98F, DHS045N98I, DSG028N10NA, SPP20N60C3, DSG041N08NA, DSG045N14N, DSG047N08N3, DSG048N08N3, DSG052N14N, DSG053N08N3, DSG054N10N3, DSG059N15NA

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