All MOSFET. DSG030N10N3 Datasheet

 

DSG030N10N3 Datasheet and Replacement


   Type Designator: DSG030N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 2710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220
 

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DSG030N10N3 Datasheet (PDF)

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DSG030N10N3

DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3

Datasheet: DHS045N88I , DHS045N98 , DHS045N98B , DHS045N98D , DHS045N98E , DHS045N98F , DHS045N98I , DSG028N10NA , IRF9540N , DSG041N08NA , DSG045N14N , DSG047N08N3 , DSG048N08N3 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA .

History: DSU007N04NA

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