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DSG070N10L3 Spec and Replacement


   Type Designator: DSG070N10L3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 713 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

 DSG070N10L3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSG070N10L3 Specs

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DSG070N10L3

DSG070N10L3 100V/5.9m /100A N-MOSFET Features Key Parameters Low on resistance VDS 100V Low reverse transfer capacitances RDS(on)typ. 5.9m 100% single pulse avalanche energy test ID 100A 100% VDS test Vth 1.7V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 2690pF Qgd 12nC Applications Motor Control and Drive Charge/Discharge for Battery Mana... See More ⇒

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DSG070N10L3

DSG070N15NA 140A 150V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =150V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which G R = 5.9m DS(on) (TYP) provides excellent Rdson and low Gate charge at the same 1 time. Which accords with the RoHS standard. 3 S I = 140A D 2 Features Low on resistance Low ga... See More ⇒

Detailed specifications: DSG041N08NA , DSG045N14N , DSG047N08N3 , DSG048N08N3 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA , AON6380 , DSG070N15NA , DSG108N20NA , DSG140N12N3 , DSG270N12N3 , DSN108N20N , DHS025N88E , DHS025N88F , DHS025N88I .

History: DSG059N15NA

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