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DSN108N20N Spec and Replacement


   Type Designator: DSN108N20N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 367 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO3PN

 DSN108N20N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSN108N20N Specs

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DSN108N20N

DSN108N20N 200V/11m /110A N-MOSFET Features Key Parameters VDS Low on resistance 200V RDS(on)typ. Low reverse transfer capacitances 11m ID 100% single pulse avalanche energy test 110A Ciss@10V 100% VDS test 4260pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 9nC Applications Power switching applications DC-DC converters Full bridge co... See More ⇒

Detailed specifications: DSG053N08N3 , DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA , DSG108N20NA , DSG140N12N3 , DSG270N12N3 , STP80NF70 , DHS025N88E , DHS025N88F , DHS025N88I , DHS030N88 , DHS030N88E , DHS030N88F , DHS030N88I , DHS046N10 .

Keywords - DSN108N20N MOSFET specs

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