DSN108N20N Datasheet. Specs and Replacement

Type Designator: DSN108N20N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 367 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO3PN

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DSN108N20N datasheet

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DSN108N20N

DSN108N20N 200V/11m /110A N-MOSFET Features Key Parameters VDS Low on resistance 200V RDS(on)typ. Low reverse transfer capacitances 11m ID 100% single pulse avalanche energy test 110A Ciss@10V 100% VDS test 4260pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 9nC Applications Power switching applications DC-DC converters Full bridge co... See More ⇒

Detailed specifications: DSG053N08N3, DSG054N10N3, DSG059N15NA, DSG070N10L3, DSG070N15NA, DSG108N20NA, DSG140N12N3, DSG270N12N3, STP80NF70, DHS025N88E, DHS025N88F, DHS025N88I, DHS030N88, DHS030N88E, DHS030N88F, DHS030N88I, DHS046N10

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