All MOSFET. DSN108N20N Datasheet

 

DSN108N20N Datasheet and Replacement


   Type Designator: DSN108N20N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 367 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO3PN
 

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DSN108N20N Datasheet (PDF)

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DSN108N20N

DSN108N20N 200V/11m/110A N-MOSFET Features Key ParametersVDS Low on resistance 200VRDS(on)typ. Low reverse transfer capacitances 11mID 100% single pulse avalanche energy test 110ACiss@10V 100% VDS test 4260pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 9nCApplications Power switching applications DC-DC converters Full bridge co

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History: BUZ906X4S | BSP75N | DTM4946 | BUZ907D | STN4920 | STN4946 | DSG052N14N

Keywords - DSN108N20N MOSFET datasheet

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