FQU8P10 Specs and Replacement
Type Designator: FQU8P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO251 IPAK
FQU8P10 substitution
FQU8P10 datasheet
fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , IRF630 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
