All MOSFET. FQU8P10 Datasheet


FQU8P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU8P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO251, IPAK

FQU8P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FQU8P10 Datasheet (PDF)

1.1. fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf Size:705K _fairchild_semi


TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

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