FQU8P10 Datasheet. Specs and Replacement

Type Designator: FQU8P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO251 IPAK

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FQU8P10 datasheet

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FQU8P10

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒

Detailed specifications: FQU2N90TUAM002, FQU3N50C, FQU4N50TUWS, FQU5N40, FDMC7582, FQU5N60C, FDMQ8403, FQU5P20, IRFP250N, FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252, HUF75842P3, HUF75852G3

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.