FQU8P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU8P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm
Package: TO251_IPAK
FQU8P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU8P10 Datasheet (PDF)
1.1. fqu8p10tu.pdf 
Size:705K _fairchild_semi
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored
1.2. fqd8p10 fqu8p10.pdf Size:705K _fairchild_semi
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast s
Datasheet: FQU2N90TU_AM002 , FQU3N50C , FQU4N50TU_WS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , IRF150 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 .
