All MOSFET. FQU8P10 Datasheet

 

FQU8P10 Datasheet and Replacement


   Type Designator: FQU8P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO251 IPAK
 

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FQU8P10 Datasheet (PDF)

 ..1. Size:705K  fairchild semi
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FQU8P10

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , 7N65 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 .

History: RMN3N5R0DN | FDMS86152 | R6006JNX | BUZ10S2 | RUH30150M | KP809B | FDS8672S

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