DSE028N10N3 Datasheet and Replacement. Cross Reference Search

DSE028N10N3 Datasheet (PDF)

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DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3

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DSE026N10N3A 100V/2.2m/180A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 2.2m Low reverse transfer capacitances VTH 3VID(Silicon limit) 100% single pulse avalanche energy test 240AID (Package limit) 100% VDS test 180ACiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 7035pFQgd 27nCApplication

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DSE022N10N3&DSG024N10N3 100V/1.7m/240A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 1.7mRDS(on)typ.TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3VIDSilicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364AIDPackage limit240A

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DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .