DSE043N14N Datasheet. Specs and Replacement
Type Designator: DSE043N14N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO263
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DSE043N14N datasheet
dse043n14n dsg045n14n.pdf
DSE043N14N&DSG045N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I... See More ⇒
dsg047n08n3 dse047n08n3.pdf
DSG047N08N3&DSE047N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 3.9m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.7m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F... See More ⇒
Detailed specifications: DHS046N10F, DHS046N10I, DHS051N10P, DHS052N10, DHS052N10B, DSE026N10N3A, DSE026N10NA, DSE028N10N3, 2N60, DSE047N08N3, DSE050N14N, DSE051N08N3, DSE054N10N3, DSE058N15NA, DSE065N10L3A, DSE108N20NA, DSE140N12N3
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