DSE047N08N3 Datasheet. Specs and Replacement

Type Designator: DSE047N08N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 705 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO263

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DSE047N08N3 datasheet

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 dsg047n08n3 dse047n08n3.pdf pdf_icon

DSE047N08N3

DSG047N08N3&DSE047N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 3.9m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.7m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F... See More ⇒

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 dse043n14n dsg045n14n.pdf pdf_icon

DSE047N08N3

DSE043N14N&DSG045N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I... See More ⇒

Detailed specifications: DHS046N10I, DHS051N10P, DHS052N10, DHS052N10B, DSE026N10N3A, DSE026N10NA, DSE028N10N3, DSE043N14N, SKD502T, DSE050N14N, DSE051N08N3, DSE054N10N3, DSE058N15NA, DSE065N10L3A, DSE108N20NA, DSE140N12N3, DSE270N12N3

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