All MOSFET. DSE047N08N3 Datasheet

 

DSE047N08N3 Datasheet and Replacement


   Type Designator: DSE047N08N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 51 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 705 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO263
 

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DSE047N08N3 Datasheet (PDF)

 ..1. Size:1084K  cn wxdh
 dsg047n08n3 dse047n08n3.pdf pdf_icon

DSE047N08N3

DSG047N08N3&DSE047N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 3.9mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 3.7mT0-263DS(on) (TYP)13 SI = 120AD2 F

 9.1. Size:1037K  cn wxdh
 dse043n14n dsg045n14n.pdf pdf_icon

DSE047N08N3

DSE043N14N&DSG045N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPP60R125P6 | TPP65R075DFD

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