DSE065N10L3A Datasheet and Replacement
Type Designator: DSE065N10L3A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 103 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 713 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO263
DSE065N10L3A substitution
DSE065N10L3A Datasheet (PDF)
dse065n10l3a.pdf

DSE065N10L3A100V/5.6m/103A N-MOSFETFeatures Key Parameters AEC-Q101 qualified VDS 100V Low on resistance RDS(on)typ. 5.6m Low reverse transfer capacitances ID 103A 100% single pulse avalanche energy test Vth 1.7V 100% VDS test Ciss@10V 2690pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 12nCApplications Motor Control and Drive Charge/Di
Datasheet: DSE026N10NA , DSE028N10N3 , DSE043N14N , DSE047N08N3 , DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA , IRF1405 , DSE108N20NA , DSE140N12N3 , DSE270N12N3 , DSG014N04N , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E .
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