All MOSFET. DSG019N04L Datasheet

 

DSG019N04L Datasheet and Replacement


   Type Designator: DSG019N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 71 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2384 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TO220
 

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DSG019N04L Datasheet (PDF)

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DSG019N04L

DSG019N04L 40V/1.6m/180A N-MOSFET Features Key Parameters Extremely low on-resistance RDS(on) VDS40VRDS(on)typ. Low reverse transfer capacitances 1.6mIDSilicon Limit 100% single pulse avalanche energy test 261AIDPackage Limit 100% VDS test 180A Pb-Free plating / Halogen-Free / RoHS compliant Vth 1.6VCiss@10V5275pFQgd 7.3nCApplicatio

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DSG019N04L

DSG014N04N40V/1.3m/200A N-MOSFETFeatures Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 1.3m 100% single pulse avalanche energy test ID (Silicon limit) 400A 100% VDS test ID (Package limit) 200A Pb-Free plating / Halogen-Free / RoHS compliant Vth 2.9VCiss@10V 9669pFApplications Qgd 11.5nC Motor Control and Drive

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Keywords - DSG019N04L MOSFET datasheet

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