DSG019N04L Datasheet. Specs and Replacement

Type Designator: DSG019N04L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 2384 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: TO220

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DSG019N04L datasheet

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DSG019N04L

DSG019N04L 40V/1.6m /180A N-MOSFET Features Key Parameters Extremely low on-resistance RDS(on) VDS 40V RDS(on)typ. Low reverse transfer capacitances 1.6m ID Silicon Limit 100% single pulse avalanche energy test 261A ID Package Limit 100% VDS test 180A Pb-Free plating / Halogen-Free / RoHS compliant Vth 1.6V Ciss@10V 5275pF Qgd 7.3nC Applicatio... See More ⇒

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DSG019N04L

DSG014N04N 40V/1.3m /200A N-MOSFET Features Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 1.3m 100% single pulse avalanche energy test ID (Silicon limit) 400A 100% VDS test ID (Package limit) 200A Pb-Free plating / Halogen-Free / RoHS compliant Vth 2.9V Ciss@10V 9669pF Applications Qgd 11.5nC Motor Control and Drive... See More ⇒

Detailed specifications: DSE051N08N3, DSE054N10N3, DSE058N15NA, DSE065N10L3A, DSE108N20NA, DSE140N12N3, DSE270N12N3, DSG014N04N, IRF830, DSG024N10N3, DHS052N10D, DHS052N10E, DHS052N10F, DHS052N10I, DHS052N10P, DHS055N07, DHS055N07B

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