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DSG024N10N3 Spec and Replacement


   Type Designator: DSG024N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 177 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 3463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO220

 DSG024N10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSG024N10N3 Specs

 ..1. Size:1551K  cn wxdh
 dse022n10n3 dsg024n10n3.pdf pdf_icon

DSG024N10N3

DSE022N10N3&DSG024N10N3 100V/1.7m /240A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 1.7m RDS(on)typ. TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3V ID Silicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364A ID Package limit 240A ... See More ⇒

 9.1. Size:947K  cn wxdh
 dse026n10na dsg028n10na.pdf pdf_icon

DSG024N10N3

DSE026N10NA&DSG028N10NA 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided R = 2.4m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 2.2m T0-263 DS(on) (TYP) 1 3 S I = 180A D 2... See More ⇒

Detailed specifications: DSE054N10N3 , DSE058N15NA , DSE065N10L3A , DSE108N20NA , DSE140N12N3 , DSE270N12N3 , DSG014N04N , DSG019N04L , IRLB3034 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 , DHS055N07B , DHS055N07D .

Keywords - DSG024N10N3 MOSFET specs

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