All MOSFET. DSG024N10N3 Datasheet

 

DSG024N10N3 Datasheet and Replacement


   Type Designator: DSG024N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 177 nC
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 3463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO220
 

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DSG024N10N3 Datasheet (PDF)

 ..1. Size:1551K  cn wxdh
 dse022n10n3 dsg024n10n3.pdf pdf_icon

DSG024N10N3

DSE022N10N3&DSG024N10N3 100V/1.7m/240A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 1.7mRDS(on)typ.TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3VIDSilicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364AIDPackage limit240A

 9.1. Size:947K  cn wxdh
 dse026n10na dsg028n10na.pdf pdf_icon

DSG024N10N3

DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2

Datasheet: DSE054N10N3 , DSE058N15NA , DSE065N10L3A , DSE108N20NA , DSE140N12N3 , DSE270N12N3 , DSG014N04N , DSG019N04L , 60N06 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 , DHS055N07B , DHS055N07D .

Keywords - DSG024N10N3 MOSFET datasheet

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