FN6005 Datasheet. Specs and Replacement
Type Designator: FN6005 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1624 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO220F
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FN6005 datasheet
n6005 fn6005 in6005 en6005 n6005d n6005b.pdf
N6005/FN6005/IN6005 EN6005/N6005D/N6005B 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.2m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low o... See More ⇒
Detailed specifications: F7N60, F7N70, F7N80, F80N06, F8N50, F8N60, F8N65, FD120N10ZR, AO3401, I110N04, I20N50, I25N10, I50N06, I630, I640, I740, I80N06
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