ID120N10ZR Specs and Replacement
Type Designator: ID120N10ZR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 1026 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO262
ID120N10ZR substitution
ID120N10ZR datasheet
d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf
D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low... See More ⇒
Detailed specifications: I110N04 , I20N50 , I25N10 , I50N06 , I630 , I640 , I740 , I80N06 , 12N60 , IN6005 , N6005 , N6005B , N6005D , FBM80N70P , FBM80N70B , FBM85N80P , FBM85N80B .
Keywords - ID120N10ZR MOSFET specs
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