All MOSFET. ID120N10ZR Datasheet

 

ID120N10ZR Datasheet and Replacement


   Type Designator: ID120N10ZR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 117 nC
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 1026 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO262
 

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ID120N10ZR Datasheet (PDF)

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ID120N10ZR

D120N10ZR/FD120N10ZR/ID120N10ZR/ED120N10ZR120A100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Split Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.3m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Low On Resistance Low

Datasheet: I110N04 , I20N50 , I25N10 , I50N06 , I630 , I640 , I740 , I80N06 , 4N60 , IN6005 , N6005 , N6005B , N6005D , FBM80N70P , FBM80N70B , FBM85N80P , FBM85N80B .

Keywords - ID120N10ZR MOSFET datasheet

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