IN6005 Specs and Replacement
Type Designator: IN6005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1624 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO262
IN6005 substitution
IN6005 datasheet
n6005 fn6005 in6005 en6005 n6005d n6005b.pdf
N6005/FN6005/IN6005 EN6005/N6005D/N6005B 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.2m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low o... See More ⇒
Detailed specifications: I20N50 , I25N10 , I50N06 , I630 , I640 , I740 , I80N06 , ID120N10ZR , 5N65 , N6005 , N6005B , N6005D , FBM80N70P , FBM80N70B , FBM85N80P , FBM85N80B , JMSL0315AP .
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