IN6005 Datasheet and Replacement
Type Designator: IN6005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 67 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1624 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO262
IN6005 Datasheet (PDF)
n6005 fn6005 in6005 en6005 n6005d n6005b.pdf

N6005/FN6005/IN6005EN6005/N6005D/N6005B180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 2.2mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low o
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