N6005D Datasheet. Specs and Replacement

Type Designator: N6005D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1624 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO3P

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N6005D datasheet

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 n6005 fn6005 in6005 en6005 n6005d n6005b.pdf pdf_icon

N6005D

N6005/FN6005/IN6005 EN6005/N6005D/N6005B 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.2m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low o... See More ⇒

Detailed specifications: I630, I640, I740, I80N06, ID120N10ZR, IN6005, N6005, N6005B, RFP50N06, FBM80N70P, FBM80N70B, FBM85N80P, FBM85N80B, JMSL0315AP, JMSL0315APD, JMSL0315ARD, JMSL0315AU

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