All MOSFET. FBM85N80B Datasheet

 

FBM85N80B Datasheet and Replacement


   Type Designator: FBM85N80B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 86 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 389 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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FBM85N80B Datasheet (PDF)

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FBM85N80B

FBM@FBM85N80P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90ARDS(ON)= 7.0 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedSDG Lead Free and Green Devices Available(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.GN-Channel M

Datasheet: ID120N10ZR , IN6005 , N6005 , N6005B , N6005D , FBM80N70P , FBM80N70B , FBM85N80P , IRFP250 , JMSL0315AP , JMSL0315APD , JMSL0315ARD , JMSL0315AU , JMSL0315AUD , JMSL0315AV , JMSL0401AG , JMSL0401AGQ .

Keywords - FBM85N80B MOSFET datasheet

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