FBM85N80B Specs and Replacement
Type Designator: FBM85N80B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 389 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
FBM85N80B substitution
- MOSFET ⓘ Cross-Reference Search
FBM85N80B datasheet
fbm85n80.pdf
FBM@ FBM85N80P/B N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A RDS(ON)= 7.0 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel M... See More ⇒
Detailed specifications: ID120N10ZR, IN6005, N6005, N6005B, N6005D, FBM80N70P, FBM80N70B, FBM85N80P, AON7506, JMSL0315AP, JMSL0315APD, JMSL0315ARD, JMSL0315AU, JMSL0315AUD, JMSL0315AV, JMSL0401AG, JMSL0401AGQ
Keywords - FBM85N80B MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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