JMSL0401BG Datasheet and Replacement
Type Designator: JMSL0401BG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 243 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.9 nS
Cossⓘ - Output Capacitance: 3080 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: PDFN5X6-8L
JMSL0401BG substitution
JMSL0401BG Datasheet (PDF)
jmsl0401pgq.pdf
40V, 355A, 1.1m N-channel Power SGT MOSFETJMSL0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds Tested ID(@VGS=10V) 355 ARDS(ON)_Typ(@VGS=10V 0.6 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.1 m AEC-Q101 QualifiedApplications
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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