JMSL0401BGQ Datasheet and Replacement
Type Designator: JMSL0401BGQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 299 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 3347 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00098 Ohm
Package: PDFN5X6-8L
JMSL0401BGQ substitution
JMSL0401BGQ Datasheet (PDF)
jmsl0401pgq.pdf
40V, 355A, 1.1m N-channel Power SGT MOSFETJMSL0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds Tested ID(@VGS=10V) 355 ARDS(ON)_Typ(@VGS=10V 0.6 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.1 m AEC-Q101 QualifiedApplications
Datasheet: JMSL0315APD , JMSL0315ARD , JMSL0315AU , JMSL0315AUD , JMSL0315AV , JMSL0401AG , JMSL0401AGQ , JMSL0401BG , STP80NF70 , JMSH0602AC , JMSH0602AE , JMSH0602AEQ , JMSH0602AG , JMSH0602AGQ , JMSH0602AK , JMSH0602AKQ , JMSH0602PC .
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