All MOSFET. JMSL0401BGQ Datasheet

 

JMSL0401BGQ Datasheet and Replacement


   Type Designator: JMSL0401BGQ
   Marking Code: SL0401BQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 299 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 3347 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00098 Ohm
   Package: PDFN5X6-8L
 

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JMSL0401BGQ Datasheet (PDF)

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JMSL0401BGQ

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JMSL0401BGQ

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JMSL0401BGQ

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JMSL0401BGQ

40V, 355A, 1.1m N-channel Power SGT MOSFETJMSL0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds Tested ID(@VGS=10V) 355 ARDS(ON)_Typ(@VGS=10V 0.6 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.1 m AEC-Q101 QualifiedApplications

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