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JBL083M Specs and Replacement

Type Designator: JBL083M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 286 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 242 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 1224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TOLL

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JBL083M datasheet

 ..1. Size:1268K  jiejie micro
 jbl083m.pdf pdf_icon

JBL083M

80V, 242A, 2.1m N-channel Power SGT MOSFET JBL083M Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 242 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management Schematic Diagram... See More ⇒

Detailed specifications: JBE102G, JBE102T, JBE102Y, JBE103T, JBE111P, JBE112Q, JBE112T, JBE113P, IRFZ46N, JBL101N, JMSH0605AGD, JMSH0605AGDQ, JMSH0606AG, JMSH0606AGQ, JMSH0606AK, JMSH0606AKQ, JMSH0606AU

Keywords - JBL083M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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