JBL083M Datasheet and Replacement
Type Designator: JBL083M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 286 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 242 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: POWER-JE-10X12
JBL083M substitution
JBL083M Datasheet (PDF)
jbl083m.pdf

80V, 242A, 2.1m N-channel Power SGT MOSFETJBL083MProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 242 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementSchematic Diagram
Datasheet: JBE102G , JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , JBE112T , JBE113P , STP65NF06 , JBL101N , JMSH0605AGD , JMSH0605AGDQ , JMSH0606AG , JMSH0606AGQ , JMSH0606AK , JMSH0606AKQ , JMSH0606AU .
History: HAT2037T | LS3956 | APT10086BVR | HGK014N08A | APT10M30AVR | FDD24AN06LF085
Keywords - JBL083M MOSFET datasheet
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History: HAT2037T | LS3956 | APT10086BVR | HGK014N08A | APT10M30AVR | FDD24AN06LF085



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