All MOSFET. JBL083M Datasheet

 

JBL083M Datasheet and Replacement


   Type Designator: JBL083M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 286 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 242 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 1224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TOLL
 

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JBL083M Datasheet (PDF)

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JBL083M

80V, 242A, 2.1m N-channel Power SGT MOSFETJBL083MProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 242 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementSchematic Diagram

Datasheet: JBE102G , JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , JBE112T , JBE113P , IRFZ46N , JBL101N , JMSH0605AGD , JMSH0605AGDQ , JMSH0606AG , JMSH0606AGQ , JMSH0606AK , JMSH0606AKQ , JMSH0606AU .

History: 2N6798U | IRFR4104TRPBF | 2N6794U | 2SK3780-01 | 2N6796LCC4 | FDS4675F085 | SD5001N

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