JMSH0606AKQ PDF and Equivalents Search

 

JMSH0606AKQ Specs and Replacement

Type Designator: JMSH0606AKQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

JMSH0606AKQ substitution

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JMSH0606AKQ datasheet

 ..1. Size:386K  jiejie micro
 jmsh0606akq.pdf pdf_icon

JMSH0606AKQ

JMSH0606AKQ 60V 4.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V) 4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L T... See More ⇒

 4.1. Size:349K  jiejie micro
 jmsh0606ak.pdf pdf_icon

JMSH0606AKQ

JMSH0606AK 60V 4.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom... See More ⇒

 5.1. Size:338K  jiejie micro
 jmsh0606ag.pdf pdf_icon

JMSH0606AKQ

JMSH0606AG 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom... See More ⇒

 5.2. Size:343K  jiejie micro
 jmsh0606au.pdf pdf_icon

JMSH0606AKQ

JMSH0606AU 60V 4.6m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom... See More ⇒

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Detailed specifications: JBE113P, JBL083M, JBL101N, JMSH0605AGD, JMSH0605AGDQ, JMSH0606AG, JMSH0606AGQ, JMSH0606AK, EMB04N03H, JMSH0606AU, JMSH0606PC, JMSH0606PG, JMSH0606PGD, JMSH0606PGDQ, JMSH0606PGQ, JMSH0606PK, JMSH0606PU

Keywords - JMSH0606AKQ MOSFET specs

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