All MOSFET. JMPF4N60BJ Datasheet

 

JMPF4N60BJ Datasheet and Replacement


   Type Designator: JMPF4N60BJ
   Marking Code: F4N60BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.1 nC
   tr ⓘ - Rise Time: 17.7 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
   Package: TO220F
 

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JMPF4N60BJ Datasheet (PDF)

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JMPF4N60BJ

JMPF4N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 4A Load SwitchRDS(ON)

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JMPF4N60BJ

JMPF4N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 4A Load SwitchRDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - JMPF4N60BJ MOSFET datasheet

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