JMPF4N60BJ Datasheet and Replacement
Type Designator: JMPF4N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.7 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
Package: TO220F
JMPF4N60BJ substitution
JMPF4N60BJ Datasheet (PDF)
jmpf4n60bj.pdf
JMPF4N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 4A Load SwitchRDS(ON)
jmpf4n65bj.pdf
JMPF4N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 4A Load SwitchRDS(ON)
Datasheet: JMSL0303AG , JMSL0303AK , JMSL0303AU , JMSL0303TG , JMSL0303TU , JMPF20N60BJ , JMPF20N65BJ , JMPF25N50BJ , 7N65 , JMPF4N65BJ , JMPF5N50BJ , JMPF630BJ , JMPF7N65BJ , JMPF840BJ , JMPF8N60BJ , JMPL1050AE , JMPL1050AG .
History: BUK102-50GL | HUFA75645P3
Keywords - JMPF4N60BJ MOSFET datasheet
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History: BUK102-50GL | HUFA75645P3
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