All MOSFET. JMPF8N60BJ Datasheet

 

JMPF8N60BJ Datasheet and Replacement


   Type Designator: JMPF8N60BJ
   Marking Code: F8N60BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm
   Package: TO220F
 

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JMPF8N60BJ Datasheet (PDF)

 ..1. Size:999K  jiejie micro
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JMPF8N60BJ

JMPF8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)

 9.1. Size:1001K  jiejie micro
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JMPF8N60BJ

JMPF840BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 9A Load SwitchRDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ATP213 | BSS138C3

Keywords - JMPF8N60BJ MOSFET datasheet

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