JMPF8N60BJ Specs and Replacement
Type Designator: JMPF8N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm
Package: TO220F
JMPF8N60BJ substitution
- MOSFET ⓘ Cross-Reference Search
JMPF8N60BJ datasheet
jmpf8n60bj.pdf
JMPF8N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 8A Load Switch RDS(ON) ... See More ⇒
jmpf840bj.pdf
JMPF840BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 9A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMPF20N65BJ, JMPF25N50BJ, JMPF4N60BJ, JMPF4N65BJ, JMPF5N50BJ, JMPF630BJ, JMPF7N65BJ, JMPF840BJ, IRF9540N, JMPL1050AE, JMPL1050AG, JMPL1050AGQ, JMPL1050AK, JMPL1050AKQ, JMPL1050AP, JMPL1050APD, JMPL1050AU
Keywords - JMPF8N60BJ MOSFET specs
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