JMPF8N60BJ Datasheet and Replacement
Type Designator: JMPF8N60BJ
Marking Code: F8N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 25 nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.29 Ohm
Package: TO220F
JMPF8N60BJ substitution
JMPF8N60BJ Datasheet (PDF)
jmpf8n60bj.pdf

JMPF8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)
jmpf840bj.pdf

JMPF840BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 9A Load SwitchRDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - JMPF8N60BJ MOSFET datasheet
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History: ATP213 | BSS138C3



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