All MOSFET. JMSH2010PCQ Datasheet

 

JMSH2010PCQ Datasheet and Replacement


   Type Designator: JMSH2010PCQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 304 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
   Package: TO220
 

 JMSH2010PCQ substitution

   - MOSFET ⓘ Cross-Reference Search

 

JMSH2010PCQ Datasheet (PDF)

 ..1. Size:1291K  jiejie micro
 jmsh2010pcq.pdf pdf_icon

JMSH2010PCQ

200V, 100A, 8.6m N-channel Power Strong MOSFETJMSH2010PCQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 200 V High Current Carrying Capability VGS(th)_Typ 3.0 V Fully Characterized UIS and SOAID(@VGS=10V) 100 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.6 mW AEC-Q101 QualifiedApplication

 4.1. Size:1257K  jiejie micro
 jmsh2010pc.pdf pdf_icon

JMSH2010PCQ

200V, 96A, 9.3m N-channel Power SGT MOSFETJMSH2010PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 96 ARDS(ON)_Typ(@VGS=10V 9.3 mWApplications Load Switch PWM Application Power ManagementDG STO-2

 5.1. Size:1343K  jiejie micro
 jmsh2010pe.pdf pdf_icon

JMSH2010PCQ

200V, 109A, 9.1m N-channel Power SGT MOSFETJMSH2010PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 9.1 mWApplications Load Switch PWM Application Power ManagementDG STO

 5.2. Size:555K  jiejie micro
 jmsh2010ptl.pdf pdf_icon

JMSH2010PCQ

JMSH2010PTL200V 7.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 119 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - JMSH2010PCQ MOSFET datasheet

 JMSH2010PCQ cross reference
 JMSH2010PCQ equivalent finder
 JMSH2010PCQ lookup
 JMSH2010PCQ substitution
 JMSH2010PCQ replacement

 

 
Back to Top

 


 
.