JMSH2010PCQ - параметры транзистора MOSFET, его аналоги, datasheet

JMSH2010PCQ Datasheet (PDF)

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200V, 100A, 8.6m N-channel Power Strong MOSFETJMSH2010PCQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 200 V High Current Carrying Capability VGS(th)_Typ 3.0 V Fully Characterized UIS and SOAID(@VGS=10V) 100 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.6 mW AEC-Q101 QualifiedApplication

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200V, 96A, 9.3m N-channel Power SGT MOSFETJMSH2010PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 96 ARDS(ON)_Typ(@VGS=10V 9.3 mWApplications Load Switch PWM Application Power ManagementDG STO-2

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jmsh2010pe.pdf pdf_icon

200V, 109A, 9.1m N-channel Power SGT MOSFETJMSH2010PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 9.1 mWApplications Load Switch PWM Application Power ManagementDG STO

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jmsh2010ptl.pdf pdf_icon

JMSH2010PTL200V 7.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 119 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I