JMH70R430AF Datasheet and Replacement
Type Designator: JMH70R430AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.4 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220F
JMH70R430AF substitution
JMH70R430AF Datasheet (PDF)
jmh70r430af.pdf

JMH70R430AF700V 350mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Extremely Low Gate Charge VDS700 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)350 mW Eoss@400V3.6 mJ Pb-free Lead Plating Halogen-f
jmh70r430ak.pdf

JMH70R430AK700V 352m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Extremely Low Gate Charge VDS700 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)352 m Eoss@400V3.6 J Pb-free Lead Plating Hal
Datasheet: JMH65R600MF , JMH65R600MK , JMH65R640AK , JMH65R980ACFP , JMH65R980AF , JMH65R980AK , JMH65R980AKQ , JMH65R980APLN , IRFZ46N , JMH70R430AK , JBE083M , JBE083NS , JBE084M , JMSH0803AGS , JMSH0803MC , JMSH0803ME , JMSH0803MG .
History: IRFU4510PBF | AP2607AGY-HF | AP4813GYT-HF | SLP7N65C | IRF7478TR | SMF14N65 | AONY36356
Keywords - JMH70R430AF MOSFET datasheet
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History: IRFU4510PBF | AP2607AGY-HF | AP4813GYT-HF | SLP7N65C | IRF7478TR | SMF14N65 | AONY36356



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