JBE084M Spec and Replacement
Type Designator: JBE084M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 136 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1048 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: TO263
JBE084M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JBE084M Specs
jbe083ns.pdf
80V, 133A, 5.8m N-channel Power SGT MOSFET JBE083NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 133 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Managem... See More ⇒
jbe083m.pdf
80V, 199A, 2.7m N-channel Power SGT MOSFET JBE083M Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-263-... See More ⇒
Detailed specifications: JMH65R980AF , JMH65R980AK , JMH65R980AKQ , JMH65R980APLN , JMH70R430AF , JMH70R430AK , JBE083M , JBE083NS , IRFZ48N , JMSH0803AGS , JMSH0803MC , JMSH0803ME , JMSH0803MG , JMSH0803MTL , JMSH0803NGS , JMSH0803PC , JMSH0804NC .
History: JMSH0803NGS
Keywords - JBE084M MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: JMSH0803NGS
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