JBE084M - параметры транзистора MOSFET, его аналоги, datasheet

JBE084M Datasheet (PDF)

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JBE084M80V 4.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.1 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communications

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80V, 133A, 5.8m N-channel Power SGT MOSFETJBE083NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 133 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power Managem

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80V, 199A, 2.7m N-channel Power SGT MOSFETJBE083MProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 ARDS(ON)_Typ(@VGS=10V 2.7 mWApplications Load Switch PWM Application Power ManagementDG STO-263-

Другие MOSFET... JMH65R980AF , JMH65R980AK , JMH65R980AKQ , JMH65R980APLN , JMH70R430AF , JMH70R430AK , JBE083M , JBE083NS , RU7088R , , , , , , , , .