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JMCL0410AGD Spec and Replacement


   Type Designator: JMCL0410AGD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6(2) nS
   Cossⓘ - Output Capacitance: 74(89) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019(0.039) Ohm
   Package: PDFN5X6-8L-D

 JMCL0410AGD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMCL0410AGD Specs

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JMCL0410AGD

JMCL0410AGD Description JMT N And P-channel Enhancement Mode Power MOSFET Features Applications N-channel 40V, 16A Battery Protection RDS(ON) ... See More ⇒

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JMCL0410AGD

JMCL0410AUD Description JMT N And P-channel Enhancement Mode Power MOSFET Features Applications N-channel 40V, 14A Battery Protection RDS(ON) ... See More ⇒

Detailed specifications: JMSH1566AK , JMSH1566AKQ , JBL102E , JBL102T , JBL102Y , JBL111P , JBL112T , JBL113P , IRFB4115 , JMCL0410AUD , JMH65R030PSFD , JMH65R040ASFD , JMH65R040ASFDQ , JMH65R040PSFD , JMH65R070PCFD , JMH65R070PFFD , JMH65R070PSFD .

History: DHSJ25N65F | JMCL0410AUD

Keywords - JMCL0410AGD MOSFET specs

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