JMPC18N20BJ Datasheet and Replacement
Type Designator: JMPC18N20BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 191 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 25 nC
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
JMPC18N20BJ Datasheet (PDF)
jmpc18n20bj.pdf

200V, 18A, 113m N-channel Power Planar MOSFETJMPC18N20BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 18 ARDS(ON)_Typ(@VGS=10V 113 mWApplications Load Switch PWM Application Power ManagementDG S
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JMPC18N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 18A Load SwitchRDS(ON)
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Datasheet: JMPC10N60BJ , JMPC10N65BJ , JMPC12N60BJ , JMPC12N65BJ , JMPC13N50BJ , JMPC15N50BJ , JMPC16N60BJ , JMPC16N65BJ , 8205A , JMPC18N50BJ , JMPC20N60BJ , JMPC20N65BJ , JMPC25N50BJ , JMPC25N60BJ , JMPC28N20BJ , JMSH0601AG , JMSH0601AGQ .
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