JMPC20N65BJ Datasheet and Replacement
Type Designator: JMPC20N65BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 266 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO220
JMPC20N65BJ substitution
JMPC20N65BJ Datasheet (PDF)
jmpc20n65bj.pdf
JMPC20N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 20A Load SwitchRDS(ON)
jmpc20n60bj.pdf
JMPC20N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 20A Load SwitchRDS(ON)
jmpc25n60bj.pdf
600V, 25A, 282m N-channel Power Planar MOSFETJMPC25N60BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 600 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 25 ARDS(ON)_Typ(@VGS=10V 282 mWApplications Load Switch PWM Application Power ManagementDG S
jmpc25n50bj.pdf
JMPC25N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 25A Load SwitchRDS(ON)
Datasheet: JMPC12N65BJ , JMPC13N50BJ , JMPC15N50BJ , JMPC16N60BJ , JMPC16N65BJ , JMPC18N20BJ , JMPC18N50BJ , JMPC20N60BJ , IRF9540N , JMPC25N50BJ , JMPC25N60BJ , JMPC28N20BJ , JMSH0601AG , JMSH0601AGQ , JMSH0601ATL , JMSH0601ATLQ , JMSH0601BG .
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