JMPF18N50BJ Spec and Replacement
Type Designator: JMPF18N50BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
JMPF18N50BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMPF18N50BJ Specs
jmpf18n50bj.pdf
JMPF18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON) ... See More ⇒
jmpf10n65bj.pdf
JMPF10N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 10A Load Switch RDS(ON) ... See More ⇒
jmpf12n65bj.pdf
JMPF12N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 12A Load Switch RDS(ON) ... See More ⇒
jmpf16n60bj.pdf
JMPF16N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 16A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMPF10N60BJ , JMPF10N65BJ , JMPF12N60BJ , JMPF12N65BJ , JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , IRFZ46N , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL .
Keywords - JMPF18N50BJ MOSFET specs
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