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JMPK630BJ Spec and Replacement


   Type Designator: JMPK630BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

 JMPK630BJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMPK630BJ Specs

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JMPK630BJ

200V, 8.1A, 231m N-channel Power Planar MOSFET JMPK630BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 8.1 A RDS(ON)_Typ(@VGS=10V 231 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒

Detailed specifications: JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , IRFB7545 , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC .

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