JMPK630BJ Datasheet. Specs and Replacement
Type Designator: JMPK630BJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
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JMPK630BJ substitution
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JMPK630BJ datasheet
jmpk630bj.pdf
200V, 8.1A, 231m N-channel Power Planar MOSFET JMPK630BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 8.1 A RDS(ON)_Typ(@VGS=10V 231 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒
Detailed specifications: JMPF13N50BJ, JMPF15N50BJ, JMPF16N60BJ, JMPF16N65BJ, JMPF18N50BJ, JMPK4N60BJ, JMPK4N65BJ, JMPK5N50BJ, IRFB7545, JMPK7N65BJ, JMSH1001AE7, JMSH1001AE7Q, JMSH1001ATL, JMSH1001ATLQ, JMSH1001BTL, JMSH1001MTL, JMSH1001NC
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