All MOSFET. JMPK630BJ Datasheet

 

JMPK630BJ Datasheet and Replacement


   Type Designator: JMPK630BJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252
 

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JMPK630BJ Datasheet (PDF)

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JMPK630BJ

200V, 8.1A, 231m N-channel Power Planar MOSFETJMPK630BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 8.1 ARDS(ON)_Typ(@VGS=10V 231 mWApplications Load Switch PWM Application Power ManagementDG S

Datasheet: JMPF13N50BJ , JMPF15N50BJ , JMPF16N60BJ , JMPF16N65BJ , JMPF18N50BJ , JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , 8N60 , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC .

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