SSN1N45B Datasheet. Specs and Replacement

Type Designator: SSN1N45B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm

Package: TO92

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SSN1N45B datasheet

 ..1. Size:667K  fairchild semi
 ssn1n45b.pdf pdf_icon

SSN1N45B

SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒

 0.1. Size:666K  fairchild semi
 ssn1n45bbu ssn1n45bta.pdf pdf_icon

SSN1N45B

SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒

Detailed specifications: RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, FDME905PT, SI4542DY, FDC8886, FCP190N60, IRF1407, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U, DMG3414U, DMG3420U, DMG5802LFX, DMG6898LSD

Keywords - SSN1N45B MOSFET specs

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