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SSN1N45B Spec and Replacement


   Type Designator: SSN1N45B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
   Package: TO92

 SSN1N45B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSN1N45B Specs

 ..1. Size:667K  fairchild semi
 ssn1n45b.pdf pdf_icon

SSN1N45B

SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒

 0.1. Size:666K  fairchild semi
 ssn1n45bbu ssn1n45bta.pdf pdf_icon

SSN1N45B

SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tes... See More ⇒

Detailed specifications: RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 , FCP190N60 , IRF1407 , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , DMG3420U , DMG5802LFX , DMG6898LSD .

History: XP151A13COMR | SM103

Keywords - SSN1N45B MOSFET specs

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