SSN1N45B Datasheet and Replacement
Type Designator: SSN1N45B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
Package: TO92
SSN1N45B substitution
SSN1N45B Datasheet (PDF)
ssn1n45b.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
ssn1n45bbu ssn1n45bta.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
Datasheet: RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 , FCP190N60 , P0903BDG , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , DMG3420U , DMG5802LFX , DMG6898LSD .
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