SSN1N45B Datasheet and Replacement
Type Designator: SSN1N45B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.5 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
Package: TO92
SSN1N45B substitution
SSN1N45B Datasheet (PDF)
ssn1n45b.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
ssn1n45bbu ssn1n45bta.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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