DMG5802LFX Datasheet. Specs and Replacement
Type Designator: DMG5802LFX 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 1066.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: WDFN50206
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DMG5802LFX substitution
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DMG5802LFX datasheet
dmg5802lfx.pdf
DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 15m @ VGS = 4.5V 6.5A Low Input/Output Leakage 24V Lead Free By Design/RoHS Compliant (Note 1) 20m @ VGS = 2.5V 5.6A "Green" Device (Note 2) ESD Protected up... See More ⇒
Detailed specifications: FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U, DMG3414U, DMG3420U, 18N50, DMG6898LSD, DMG6968U, DMG6968UDM, DMG6968UTS, DMG8601UFG, DMG8822UTS, DMG9926UDM, DMG9926USD
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