All MOSFET. DMG5802LFX Datasheet

 

DMG5802LFX Datasheet and Replacement


   Type Designator: DMG5802LFX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Cossⓘ - Output Capacitance: 1066.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: WDFN50206
 

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DMG5802LFX Datasheet (PDF)

 ..1. Size:136K  diodes
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DMG5802LFX

DMG5802LFXDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 15m @ VGS = 4.5V 6.5A Low Input/Output Leakage 24V Lead Free By Design/RoHS Compliant (Note 1) 20m @ VGS = 2.5V 5.6A "Green" Device (Note 2) ESD Protected up

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