All MOSFET. JMH65R190AW Datasheet

 

JMH65R190AW Datasheet and Replacement


   Type Designator: JMH65R190AW
   Marking Code: H65R190A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 189 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO262
 

 JMH65R190AW substitution

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JMH65R190AW Datasheet (PDF)

 ..1. Size:323K  jiejie micro
 jmh65r190aw.pdf pdf_icon

JMH65R190AW

JMH65R190AW650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 20 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)170 m Eoss@400V5.2 J Pb-free Lead Plating Halog

 4.1. Size:332K  jiejie micro
 jmh65r190ae.pdf pdf_icon

JMH65R190AW

JMH65R190AE650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 20 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)170 m Eoss@400V5.2 J Pb-free Lead Plating Halog

 4.2. Size:347K  jiejie micro
 jmh65r190af.pdf pdf_icon

JMH65R190AW

JMH65R190AF650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V)170 100% UIS Tested, 100% Rg Tested m Eoss@400V5.2 J Pb-free Lead Plating Hal

 4.3. Size:358K  jiejie micro
 jmh65r190apln.pdf pdf_icon

JMH65R190AW

JMH65R190APLN650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 17.4 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)169 m Eoss@400V5.2 J Pb-free Lead Plating H

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Datasheet: JMH65R190ACFDQ , JMH65R190ACFP , JMH65R190AE , JMH65R190AF , JMH65R190AFFD , JMH65R190APLN , JMH65R190APLNFD , JMH65R190AS , STP65NF06 , JMH65R190PCFD , JMH65R190PEFD , JMH65R190PFFD , JMH65R190PSFD , JMSH1204PC , JMSH1204PE , JMSH1204PTL , JMSH1207AC .

Keywords - JMH65R190AW MOSFET datasheet

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