DMG6898LSD Spec and Replacement
Type Designator: DMG6898LSD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Cossⓘ - Output Capacitance: 1149 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SO8
DMG6898LSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG6898LSD Specs
dmg6898lsd.pdf
DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections See Di... See More ⇒
Detailed specifications: SSN1N45B , DMG1012T , DMG1012UW , DMG1024UV , DMG2302U , DMG3414U , DMG3420U , DMG5802LFX , 20N50 , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , DMG8822UTS , DMG9926UDM , DMG9926USD , DMN2004DMK .
History: AP2604CDT
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