All MOSFET. DMG6898LSD Datasheet

 

DMG6898LSD Datasheet and Replacement


   Type Designator: DMG6898LSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Qg ⓘ - Total Gate Charge: 26 nC
   Cossⓘ - Output Capacitance: 1149 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO8
 

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DMG6898LSD Datasheet (PDF)

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DMG6898LSD

DMG6898LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Di

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