JMH65R290AE Datasheet. Specs and Replacement
Type Designator: JMH65R290AE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 31 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO263
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JMH65R290AE substitution
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JMH65R290AE datasheet
jmh65r290ae.pdf
JMH65R290AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 259 m Pb-free Lead Plating Eoss@400V 4.59 J ... See More ⇒
jmh65r290aefdq.pdf
JMH65R290AEFDQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A RDS(ON)_Typ (@ VGS = 10V) 259 m Ultra Fast Body Diode Eoss@400V 4.59 J 100% UIS Tested, 100% Rg Tested ... See More ⇒
jmh65r290af.pdf
JMH65R290AF 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 260 mW Pb-free Lead Plating Eoss@400V 4.59 mJ Halogen-... See More ⇒
Detailed specifications: JMSH1003NE, JMSH1003NE7, JMSH1003NG, JMSH1003TC, JMSH1003TE, JMSH1003TF, JMSH1003TTL, JMH65R290ACFP, 2N7000, JMH65R290AEFDQ, JMH65R290AF, JMH65R290APLN, JMH65R360AF, JMH65R360AK, JMH65R360MF, JMH65R360MK, JMH65R360PF
Keywords - JMH65R290AE MOSFET specs
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