JMH65R290AEFDQ Datasheet. Specs and Replacement

Type Designator: JMH65R290AEFDQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO263

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JMH65R290AEFDQ datasheet

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JMH65R290AEFDQ

JMH65R290AEFDQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A RDS(ON)_Typ (@ VGS = 10V) 259 m Ultra Fast Body Diode Eoss@400V 4.59 J 100% UIS Tested, 100% Rg Tested ... See More ⇒

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JMH65R290AEFDQ

JMH65R290AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Extremely Low Gate Charge Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 259 m Pb-free Lead Plating Eoss@400V 4.59 J ... See More ⇒

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JMH65R290AEFDQ

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JMH65R290AEFDQ

JMH65R290AF 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 12.0 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 260 mW Pb-free Lead Plating Eoss@400V 4.59 mJ Halogen-... See More ⇒

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Detailed specifications: JMSH1003NE7, JMSH1003NG, JMSH1003TC, JMSH1003TE, JMSH1003TF, JMSH1003TTL, JMH65R290ACFP, JMH65R290AE, STP75NF75, JMH65R290AF, JMH65R290APLN, JMH65R360AF, JMH65R360AK, JMH65R360MF, JMH65R360MK, JMH65R360PF, JMH65R360PK

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