JMH65R430AE Datasheet. Specs and Replacement

Type Designator: JMH65R430AE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.8 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: TO263

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JMH65R430AE datasheet

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JMH65R430AE

JMH65R430AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal... See More ⇒

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JMH65R430AE

JMH65R430AF 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal... See More ⇒

 4.2. Size:341K  jiejie micro
 jmh65r430acfp.pdf pdf_icon

JMH65R430AE

JMH65R430ACFP 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating H... See More ⇒

 4.3. Size:359K  jiejie micro
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JMH65R430AE

JMH65R430AKQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A Ultra Fast Body Diode RDS(ON)_Typ (@ VGS = 10V) 370 m Eoss@400V 2.2 J 100% UIS Tested, 100% Rg Tested P... See More ⇒

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Detailed specifications: JMSH1018AG, JMSH1018PC, JMSH1018PE, JMSH1018PG, JMSH1018PGD, JMSH1018PGQ, JMSH1018PK, JMSH1018PP, AO4407A, JMH65R430AF, JMH65R430AK, JMH65R430AKQ, JMH65R430APLN, JMPC34N20BJ, JMPC4N60BJ, JMPC4N65BJ, JMPC52N20BJ

Keywords - JMH65R430AE MOSFET specs

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