JMH65R430AE PDF and Equivalents Search

 

JMH65R430AE Specs and Replacement


   Type Designator: JMH65R430AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: TO263
 

 JMH65R430AE substitution

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JMH65R430AE datasheet

 ..1. Size:331K  jiejie micro
 jmh65r430ae.pdf pdf_icon

JMH65R430AE

JMH65R430AE 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal... See More ⇒

 4.1. Size:350K  jiejie micro
 jmh65r430af.pdf pdf_icon

JMH65R430AE

JMH65R430AF 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating Hal... See More ⇒

 4.2. Size:341K  jiejie micro
 jmh65r430acfp.pdf pdf_icon

JMH65R430AE

JMH65R430ACFP 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 364 m Eoss@400V 2.2 J Pb-free Lead Plating H... See More ⇒

 4.3. Size:359K  jiejie micro
 jmh65r430akq.pdf pdf_icon

JMH65R430AE

JMH65R430AKQ 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit Extremely Low Gate Charge VDS 650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ 3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A Ultra Fast Body Diode RDS(ON)_Typ (@ VGS = 10V) 370 m Eoss@400V 2.2 J 100% UIS Tested, 100% Rg Tested P... See More ⇒

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Detailed specifications: JMSH1018AG , JMSH1018PC , JMSH1018PE , JMSH1018PG , JMSH1018PGD , JMSH1018PGQ , JMSH1018PK , JMSH1018PP , AON7506 , JMH65R430AF , JMH65R430AK , JMH65R430AKQ , JMH65R430APLN , JMPC34N20BJ , JMPC4N60BJ , JMPC4N65BJ , JMPC52N20BJ .

History: IXFR36N60P | TK18A30D

Keywords - JMH65R430AE MOSFET specs

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