JMPC4N65BJ Datasheet. Specs and Replacement
Type Designator: JMPC4N65BJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.64 Ohm
Package: TO220
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JMPC4N65BJ datasheet
jmpc4n65bj.pdf
JMPC4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON) ... See More ⇒
jmpc4n60bj.pdf
JMPC4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMSH1018PP, JMH65R430AE, JMH65R430AF, JMH65R430AK, JMH65R430AKQ, JMH65R430APLN, JMPC34N20BJ, JMPC4N60BJ, IRFP450, JMPC52N20BJ, JMPC5N50BJ, JMPC630BJ, JMPC7N65BJ, JMPC840BJ, JMPC8N60BJ, JMSH1004AC, JMSH1004AE
Keywords - JMPC4N65BJ MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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History: VBJ2658
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