All MOSFET. JMSH0406AGQ Datasheet

 

JMSH0406AGQ Datasheet and Replacement


   Type Designator: JMSH0406AGQ
   Marking Code: SH0406AQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 14.9 nC
   tr ⓘ - Rise Time: 29.8 nS
   Cossⓘ - Output Capacitance: 662 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: PDFN5X6-8L
 

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JMSH0406AGQ Datasheet (PDF)

 ..1. Size:399K  jiejie micro
 jmsh0406agq.pdf pdf_icon

JMSH0406AGQ

JMSH0406AGQ40V 4.1m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P

 4.1. Size:345K  jiejie micro
 jmsh0406ag.pdf pdf_icon

JMSH0406AGQ

JMSH0406AG40V 4.1m N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

 4.2. Size:390K  jiejie micro
 jmsh0406agdq.pdf pdf_icon

JMSH0406AGQ

JMSH0406AGDQ40V 5.2m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio

 4.3. Size:285K  jiejie micro
 jmsh0406agd.pdf pdf_icon

JMSH0406AGQ

JMSH0406AGD40V 5.2m Dual N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit Low Gate Charge, Qg VDS40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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