JMSH0406AGQ Datasheet. Specs and Replacement

Type Designator: JMSH0406AGQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.8 nS

Cossⓘ - Output Capacitance: 662 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: PDFN5X6-8L

JMSH0406AGQ substitution

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JMSH0406AGQ datasheet

 ..1. Size:399K  jiejie micro
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JMSH0406AGQ

JMSH0406AGQ 40V 4.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P... See More ⇒

 4.1. Size:345K  jiejie micro
 jmsh0406ag.pdf pdf_icon

JMSH0406AGQ

JMSH0406AG 40V 4.1m N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE... See More ⇒

 4.2. Size:390K  jiejie micro
 jmsh0406agdq.pdf pdf_icon

JMSH0406AGQ

JMSH0406AGDQ 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio... See More ⇒

 4.3. Size:285K  jiejie micro
 jmsh0406agd.pdf pdf_icon

JMSH0406AGQ

JMSH0406AGD 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit Low Gate Charge, Qg VDS 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE... See More ⇒

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Detailed specifications: JMSH1002TE, JMSH1002TTL, JMSH1002YC, JMSH1002YE, JMSH1002YTL, JMSH0406AG, JMSH0406AGD, JMSH0406AGDQ, IRFB4227, JMSH0406AK, JMSH0406AKQ, JMSH0406AU, JMSH0406PG, JMSH0406PGD, JMSH0406PGDQ, JMSH0406PGQ, JMSH0406PK

Keywords - JMSH0406AGQ MOSFET specs

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