JMSL0401PGQ Datasheet. Specs and Replacement

Type Designator: JMSL0401PGQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 355 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 3122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm

Package: PDFN5X6-8L

JMSL0401PGQ substitution

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JMSL0401PGQ datasheet

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JMSL0401PGQ

40V, 297A, 1.2m N-channel Power SGT MOSFET JMSL0401PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 297 A RDS(ON)_Typ(@VGS=10V 0.8 mW RDS(ON)_Typ(@VGS=4.5V 1.2 mW Applications Load Switch PWM Application Pow... See More ⇒

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Detailed specifications: JMSH1010PC, JMSH1010PG, JMSH1010PK, JMSH1010PU, JMSH0406PU, JMSH0406PUQ, JMSH0406BUQ, JMSL0401PG, AON7506, JMSL0402AG, JMSL0402AGQ, JMSL0402AK, JMSL0402AKQ, JMSL0402AU, JMSL0402BG, JMSL0402BGQ, JMSL0402MGQ

Keywords - JMSL0401PGQ MOSFET specs

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