JMTV100N02A Datasheet and Replacement
Type Designator: JMTV100N02A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: DFN2020-6L
JMTV100N02A substitution
JMTV100N02A Datasheet (PDF)
jmtv100n02a.pdf
JMTV100N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 10A Load SwitchRDS(ON)
jmtv120n03a.pdf
JMTV120N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 12A Load SwitchRDS(ON)
Datasheet: JMSL0402PG , JMSL0402PTL , JMSL0402TG , JMTR3002A , JMTT8810KS , JMTV070N02A , JMTV075N03A , JMTV080N02A , IRFB31N20D , JMTV120N03A , JMTV200P03A , JMTV210P02A , JMTV2305A , JMTV2333A , JMTV240N03A , JMTV250P02A , JMTV3010A .
History: SM4378NSKP | BL20N50-W | IRF7465 | FXN100S55T | BL13N25L-P | IRF7521D1 | FQI3P20TU
Keywords - JMTV100N02A MOSFET datasheet
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History: SM4378NSKP | BL20N50-W | IRF7465 | FXN100S55T | BL13N25L-P | IRF7521D1 | FQI3P20TU
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