All MOSFET. JMTP850P04A Datasheet

 

JMTP850P04A Datasheet and Replacement


   Type Designator: JMTP850P04A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOP8L
 

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JMTP850P04A Datasheet (PDF)

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JMTP850P04A

-40V, -5A, 72m P-channel Power Trench MOSFETJMTP850P04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS -40 V Pb-free platingVGS(th)_Typ -1.6 VID(@VGS=10V) -5 AApplicationsRDS(ON)_Typ(@VGS=-10V 54 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 72 mW PWM Application Power ManagementDG

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