JMTP850P04A Datasheet. Specs and Replacement

Type Designator: JMTP850P04A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOP8L

JMTP850P04A substitution

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JMTP850P04A datasheet

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JMTP850P04A

-40V, -5A, 72m P-channel Power Trench MOSFET JMTP850P04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS -40 V Pb-free plating VGS(th)_Typ -1.6 V ID(@VGS=10V) -5 A Applications RDS(ON)_Typ(@VGS=-10V 54 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 72 mW PWM Application Power Management D G... See More ⇒

Detailed specifications: JMTP4406A, JMTP4407A, JMTP4407B, JMTP440P04A, JMTP4435A, JMTP4953A, JMTP4953B, JMTP520P04A, EMB04N03H, JMTP9435A, JMTP9926A, JMTP9926B, JMTJ100N02A, JMTJ11DN10A, JMTJ210P02A, JMTJ2302C, JMTJ2333A

Keywords - JMTP850P04A MOSFET specs

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